30-04-2021

8n60 Mosfet



深圳市博宇达科技有限公司主营产品及服务，深圳市博宇达科技有限公司MOSFET代理商 电源管理IC 2N60 5N60 8N60 10N60 5N50 830 840 740 3843 DS2501 DS2502 TF2929；TI，ST,MAXIM,MICROCHIP专业分销商. Electronic Manufacturer: Part no: Datasheet: Electronics Description: Unisonic Technologies: 8N60: 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET: 8N60: 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET. 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is.

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    • 8N60 Datasheet(2/8 Pages) UTC | 7.5 Amps, 600/650 Volts N ...

    Номер произв8N60
    ОписаниеN-CHANNEL POWER MOSFET
    ПроизводителиUnisonic Technologies
    логотип

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    8N60
    POWER MOSFET
    The UTC 8N60 is a high voltage and high current power
    MOSFET, designed to have better characteristics, such as fast
    switching time, low gate charge, low on-state resistance and have
    a high rugged avalanche characteristics. This power MOSFET is
    usually used at high speed switching applications in power
    supplies, PWM motor controls, high efficient DC to DC converters
    „ FEATURES
    * Ultra low gate charge ( typical 28 nC )
    * Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
    * Avalanche energy specified
    „ SYMBOL
    „ ORDERING INFORMATION
    Ordering Number
    Halogen Free
    8N60G-TA3-T
    8N60G-TF1-T
    8N60G-TF2-T
    8N60G-TF3-T
    8N60G-T2Q-T
    Package
    TO-220F1
    TO-220F
    Pin Assignment
    GDS
    GDS
    GDS
    Tube
    Tube
    Tube
    Copyright © 2014 Unisonic Technologies Co., Ltd
    QW-R502-115.G

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    UNISONIC TECHNOLOGIES CO., LTD
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    Power MOSFET
    „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
    SYMBOL
    UNIT
    Gate-Source Voltage
    VGSS
    ±30 V
    Drain Current
    Pulsed (Note 2)
    Single Pulsed (Note 3)
    Peak Diode Recovery dv/dt (Note 4)
    ID
    EAS
    dv/dt
    8A
    230 mJ
    4.5 V/ns
    147 W
    TO-220F/TO-220F1
    48 W
    50 W
    TJ
    °C
    Storage Temperature
    TSTG
    -55 ~ +150
    °C
    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
    4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
    PARAMETER
    TO-220/TO-262
    TO-220F/TO-220F1
    SYMBOL
    θJC
    62.5
    2.6
    UNIT
    °C/W
    °C/W
    www.unisonic.com.tw
    QW-R502-115.G

    Всего страниц9 Pages
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